ASTM F615M-1995(2008) 在半导体元件上喷镀金属的安全电流脉冲操作区域的标准作法(米制)
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【英文标准名称】:StandardPracticeforDeterminingSafeCurrentPulse-OperatingRegionsforMetallizationonSemiconductorComponents(Metric)
【原文标准名称】:在半导体元件上喷镀金属的安全电流脉冲操作区域的标准作法(米制)
【标准号】:ASTMF615M-1995(2008)
【标准状态】:现行
【国别】:美国
【发布日期】:1995
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Practice)
【标准水平】:()
【中文主题词】:
【英文主题词】:currentpulse;currentpulseburnout;metallizationburnout;safecurrentpulse;semiconductorburnout;Burnoutresistance;Currentmeasurement--semiconductors;Currentpulseburnout;Destructivetesting--semiconductors;Electricalconductors(semicon
【摘要】:Solid-stateelectronicdevicessubjectedtostressesfromexcessivecurrentpulsessometimesfailbecauseaportionofthemetallizationfusesorvaporizes(suffersburnout).Burnoutsusceptibilitycanvarysignificantlyfromcomponenttocomponentonagivenwafer,regardlessofdesign.Thispracticeprovidesaprocedureforestablishingthelimitsofpulsecurrentoverstresswithinwhichthemetallizationofagivendeviceshouldsurvive.Thispracticecanbeusedasadestructivetestinalot-samplingprogramtodeterminetheboundariesofthesafeoperatingregionhavingdesiredsurvivalprobabilitiesandstatisticalconfidencelevelswhenappropriatesamplequantitiesandstatisticalanalysesareused.Note28212;Thepracticemaybeextendedtoinferthesurvivabilityofuntestedmetallizationadjacenttothespecimenmetallizationonasemiconductordieorwaferifcareistakenthatappropriatesimilaritiesexistinthedesignandfabricationvariables.1.1Thispracticecoversproceduresfordeterminingoperatingregionsthataresafefrommetallizationburnoutinducedbycurrentpulsesoflessthan1-sduration.Note18212;Inthispractice,x201C;metallizationx201D;referstometalliclayersonsemiconductorcomponentssuchasinterconnectpatternsonintegratedcircuits.Theprinciplesofthepracticemay,however,beextendedtonearlyanycurrent-carryingpath.Thetermx201C;burnoutx201D;referstoeitherfusingorvaporization.1.2Thispracticeisbasedontheapplicationofunipolarrectangularcurrenttestpulses.Anextrapolationtechniqueisspecifiedformappingsafeoperatingregionsinthepulse-amplitudeversuspulse-durationplane.AprocedureisprovidedinAppendixX2torelatesafeoperatingregionsestablishedfromrectangularpulsedatatosafeoperatingregionsforarbitrarypulseshapes.1.3Thispracticeisnotintendedtoapplytometallizationdamagemechanismsotherthanfusingorvaporizationinducedbycurrentpulsesand,inparticular,isnotintendedtoapplytolong-termmechanisms,suchasmetalmigration.1.4Thispracticeisnotintendedtodeterminethenatureofanydefectcausingfailure.1.5Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L40
【国际标准分类号】:
【页数】:5P.;A4
【正文语种】:英语
【原文标准名称】:在半导体元件上喷镀金属的安全电流脉冲操作区域的标准作法(米制)
【标准号】:ASTMF615M-1995(2008)
【标准状态】:现行
【国别】:美国
【发布日期】:1995
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Practice)
【标准水平】:()
【中文主题词】:
【英文主题词】:currentpulse;currentpulseburnout;metallizationburnout;safecurrentpulse;semiconductorburnout;Burnoutresistance;Currentmeasurement--semiconductors;Currentpulseburnout;Destructivetesting--semiconductors;Electricalconductors(semicon
【摘要】:Solid-stateelectronicdevicessubjectedtostressesfromexcessivecurrentpulsessometimesfailbecauseaportionofthemetallizationfusesorvaporizes(suffersburnout).Burnoutsusceptibilitycanvarysignificantlyfromcomponenttocomponentonagivenwafer,regardlessofdesign.Thispracticeprovidesaprocedureforestablishingthelimitsofpulsecurrentoverstresswithinwhichthemetallizationofagivendeviceshouldsurvive.Thispracticecanbeusedasadestructivetestinalot-samplingprogramtodeterminetheboundariesofthesafeoperatingregionhavingdesiredsurvivalprobabilitiesandstatisticalconfidencelevelswhenappropriatesamplequantitiesandstatisticalanalysesareused.Note28212;Thepracticemaybeextendedtoinferthesurvivabilityofuntestedmetallizationadjacenttothespecimenmetallizationonasemiconductordieorwaferifcareistakenthatappropriatesimilaritiesexistinthedesignandfabricationvariables.1.1Thispracticecoversproceduresfordeterminingoperatingregionsthataresafefrommetallizationburnoutinducedbycurrentpulsesoflessthan1-sduration.Note18212;Inthispractice,x201C;metallizationx201D;referstometalliclayersonsemiconductorcomponentssuchasinterconnectpatternsonintegratedcircuits.Theprinciplesofthepracticemay,however,beextendedtonearlyanycurrent-carryingpath.Thetermx201C;burnoutx201D;referstoeitherfusingorvaporization.1.2Thispracticeisbasedontheapplicationofunipolarrectangularcurrenttestpulses.Anextrapolationtechniqueisspecifiedformappingsafeoperatingregionsinthepulse-amplitudeversuspulse-durationplane.AprocedureisprovidedinAppendixX2torelatesafeoperatingregionsestablishedfromrectangularpulsedatatosafeoperatingregionsforarbitrarypulseshapes.1.3Thispracticeisnotintendedtoapplytometallizationdamagemechanismsotherthanfusingorvaporizationinducedbycurrentpulsesand,inparticular,isnotintendedtoapplytolong-termmechanisms,suchasmetalmigration.1.4Thispracticeisnotintendedtodeterminethenatureofanydefectcausingfailure.1.5Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L40
【国际标准分类号】:
【页数】:5P.;A4
【正文语种】:英语
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